Cite
HARVARD Citation
Bose, R. et al. (2021). A 2D channel potential modelling of symmetric double-gate MOSFET at onset of threshold condition. International journal of electronics letters. 9 (1), pp. 14-24. [Online].
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Bose, R. et al. (2021). A 2D channel potential modelling of symmetric double-gate MOSFET at onset of threshold condition. International journal of electronics letters. 9 (1), pp. 14-24. [Online].