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HARVARD Citation
Sopko, V. et al. (n.d.). Study of the development of defects in Si PIN diodes exposed to 23 GeV/c protons. Journal of instrumentation. p. P03021. [Online].
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Sopko, V. et al. (n.d.). Study of the development of defects in Si PIN diodes exposed to 23 GeV/c protons. Journal of instrumentation. p. P03021. [Online].