Study of the development of defects in Si PIN diodes exposed to 23 GeV/c protons. (20th March 2015)

Record Type:: Journal Article
Title:: Study of the development of defects in Si PIN diodes exposed to 23 GeV/c protons. (20th March 2015)
Main Title:: Study of the development of defects in Si PIN diodes exposed to 23 GeV/c protons
Authors:: Sopko, V.
Sopko, B.
Chren, D.
Dammer, J.
Píša, V.
Abstract:
Is Part Of:: Journal of instrumentation. Volume 10:Number 3(2015:Mar.)
Journal:: Journal of instrumentation
Issue:: Volume 10:Number 3(2015:Mar.)
Issue Display:: Volume 10, Issue 3 (2015)
Year:: 2015
Volume:: 10
Issue:: 3
Issue Sort Value:: 2015-0010-0003-0000
Page Start:: P03021
Page End:: P03021
Publication Date:: 2015-03-20
Subjects:: Scientific apparatus and instruments -- Periodicals
502.84
Journal URLs:: http://iopscience.iop.org/1748-0221 ↗
http://ioppublishing.org/ ↗
DOI:: 10.1088/1748-0221/10/03/P03021 ↗
Languages:: English
ISSNs:: 1748-0221
Deposit Type:: Legaldeposit
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:: British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store
Ingest File:: 16287.xml