Effect of indium as a surfactant in (Ga1−xInx)2O3 epitaxial growth on β-Ga2O3 by metal organic vapour phase epitaxy. (19th January 2015)

• Record Type: Journal Article
• Authors: Baldini, M; Albrecht, M; Gogova, D; Schewski, R; Wagner, G
• Is Part Of: Semiconductor science and technology. Volume 30:Number 2(2015:Feb.)
• Publication Date: 2015-01-19
• Subjects: gallium oxide -- transparent semiconductor oxides -- MOVPE -- surfactant effect; 81.15.Gh -- 81.05.Hd -- 68.37.-d; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/30/2/024013
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: (Ga1− x In x )2 O3 epitaxial layers have been grown on (100) β -Ga2 O3 substrates by metal organic vapour phase epitaxy (MOVPE). The process parameters were tuned in order to obtain an In-poor (Ga1− x In x )2 O3 alloy, limiting the In incorporation below 3%. In this way it was possible to study the effect of In on the growth dynamics of Ga2 O3 . By varying the flow of the carrier gas (Ar) through the In precursor (trimethylindium) in a wide range, it was observed that for Ar/TMIn flows higher than a minimum threshold value, In was essential to obtain layers with very high crystal quality. The concentration of structural defects, such as stacking faults and twins, decreased dramatically and step-flow growth mode was achieved. These results have been explained by the tendency of In to float on the growing Ga2 O3 surface, delivering an effective surfactant effect.