Dual-active-layer InGaZnO high-voltage thin-film transistors. (26th May 2021)

• Record Type: Journal Article
• Authors: Huo, Wenxing; Liang, Huili; Lu, Yicheng; Han, Zuyin; Zhu, Rui; Sui, Yanxin; Wang, Tao; Mei, Zengxia
• Is Part Of: Semiconductor science and technology. Volume 36:Number 6(2021)
• Publication Date: 2021-05-26
• Subjects: IGZO -- high-voltage -- thin-film transistors -- dual-active-layer -- offset; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/abfd17
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: InGaZnO high-voltage thin-film transistors (HV-TFTs) with vertical dual-active-layer structure and lateral offset design were fabricated at low temperature. The TFT features such as sub-threshold swing, threshold voltage, and hysteresis voltage are similar to those of the normal devices; furthermore, they are independent of the offset length. The blocking voltage of HV-TFTs with an offset of 10 μm is 406 ± 17 V while the ON/OFF ratio reaches 10 9 at V DS = 10 V .