On the diffusion current in a MOSFET operated down to deep cryogenic temperatures. (February 2021)

• Record Type: Journal Article
• Authors: Ghibaudo, G.; Aouad, M.; Casse, M.; Poiroux, T.; Theodorou, C.
• Is Part Of: Solid-state electronics. Volume 176(2021)
• Publication Date: 2021-02
• Subjects: MOSFET -- Diffusion current -- Diffusion noise -- Cryogenic temperature; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2020.107949
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: A detailed analysis of diffusivity in a 2D inversion layer is carried out. Comprehensive study of diffusion and drift current components in a MOSFET. New formulation of diffusion noise valid from weak to strong inversion. Abstract: A detailed and didactic analysis of the diffusivity in a 2D inversion layer is carried out, providing its dependence on carrier density and temperature. Then, a comprehensive study of the diffusion and drift current components in a MOSFET is proposed. Their dependence with gate and drain voltages is investigated down to deep cryogenic temperature, revealing that at T = 4 K the diffusion current is nearly constant in strong inversion whatever the mobility law. Finally, based on our diffusivity analysis, a new formulation of the diffusion noise valid from weak to strong inversion down to very low temperature has been developed.