Electrolyte-gated transistors for neuromorphic applications. (January 2021)

• Record Type: Journal Article
• Authors: Huang, Heyi; Ge, Chen; Liu, Zhuohui; Zhong, Hai; Guo, Erjia; He, Meng; Wang, Can; Yang, Guozhen; Jin, Kuijuan
• Is Part Of: Journal of semiconductors. Volume 42:Number 1(2021)
• Publication Date: 2021-01
• Subjects: electrolyte-gated transistors -- neuromorphic comupting -- artificial synapses; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/42/1/013103
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: Von Neumann computers are currently failing to follow Moore's law and are limited by the von Neumann bottleneck. To enhance computing performance, neuromorphic computing systems that can simulate the function of the human brain are being developed. Artificial synapses are essential electronic devices for neuromorphic architectures, which have the ability to perform signal processing and storage between neighboring artificial neurons. In recent years, electrolyte-gated transistors (EGTs) have been seen as promising devices in imitating synaptic dynamic plasticity and neuromorphic applications. Among the various electronic devices, EGT-based artificial synapses offer the benefits of good stability, ultra-high linearity and repeated cyclic symmetry, and can be constructed from a variety of materials. They also spatially separate "read" and "write" operations. In this article, we provide a review of the recent progress and major trends in the field of electrolyte-gated transistors for neuromorphic applications. We introduce the operation mechanisms of electric-double-layer and the structure of EGT-based artificial synapses. Then, we review different types of channels and electrolyte materials for EGT-based artificial synapses. Finally, we review the potential applications in biological functions.