Electrical properties of Cu4ZnSnS2/ZnS heterojunction prepared by ultrasonic spray pyrolysis. (December 2016)

• Record Type: Journal Article
• Authors: Guitouni, S.; Khammar, M.; Messaoudi, M.; Attaf, N.; Aida, M. S.
• Is Part Of: Journal of semiconductors. Volume 37:Number 12(2016:Dec.)
• Publication Date: 2016-12
• Subjects: 81.15−z; CZTS -- heterojunction -- spray pyrolysis -- solar cells; 2520; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/37/12/122001
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: Cu2 ZnSnS4 (CZTS)/ZnS heterojunctions have been prepared by a successive deposition of ZnS and CZTS thin films by ultrasonic spray pyrolysis technique on glass substrates. The cupric chloride concentration has been varied in the starting solution in order to investigate its influence on device properties. CZTS/ZnS heterojunctions were characterized by recording their current-voltage characteristics at different temperatures. The obtained results exhibit a good rectifying behavior of the realized heterojunction. Analysis of these results yields saturation current, series resistance and ideality factor determination. From the activation energy of saturation current we inferred that the thermal emission through the barrier height is the dominant mechanism of the reverse current rather than the defects contribution.