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APA Citation
Yamada, A., Ishiguro, T., Kotani, J., Tomabechi, S., Nakamura, N., & Watanabe, K. (n.d.). advantages of the AlGaN spacer in InAlN high-electron-mobility transistors grown using metalorganic vapor phase epitaxy. Japanese journal of applied physics, 55, . http://access.bl.uk/ark:/81055/vdc_100115868832.0x000018