Cite
HARVARD Citation
Yamada, A. et al. (n.d.). Advantages of the AlGaN spacer in InAlN high-electron-mobility transistors grown using metalorganic vapor phase epitaxy. Japanese journal of applied physics. p. . [Online].
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Yamada, A. et al. (n.d.). Advantages of the AlGaN spacer in InAlN high-electron-mobility transistors grown using metalorganic vapor phase epitaxy. Japanese journal of applied physics. p. . [Online].