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Kuze, K. et al. (n.d.). Analysis of interface formation mechanism in GaN double-polarity selective-area growth by metalorganic vapor phase epitaxy. Japanese journal of applied physics. p. . [Online].
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Kuze, K. et al. (n.d.). Analysis of interface formation mechanism in GaN double-polarity selective-area growth by metalorganic vapor phase epitaxy. Japanese journal of applied physics. p. . [Online].