Analysis of interface formation mechanism in GaN double-polarity selective-area growth by metalorganic vapor phase epitaxy. (1st April 2016)

• Record Type: Journal Article
• Authors: Kuze, Kenta; Osumi, Noriyuki; Fujita, Yohei; Inoue, Yoku; Nakano, Takayuki
• Is Part Of: Japanese journal of applied physics. Volume 55:Number 5(2016:May)Supplement
• Publication Date: 2016-04-01
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.55.05FA05
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The fabrication of quasi-phase-matching (QPM) crystals by selective-area growth on the two asymmetrically polar surfaces of GaN is examined. We attempted the fabrication of GaN-QPM crystals by one-time growth using a carbon mask. For GaN double-polarity selective-area growth (DP-SAG), we investigated the effect of varied nitriding times of the Al2 O3 templates patterned with the carbon mask. We optimized the nitriding conditions for the DP-SAG process, and evaluated the substrate fabricated by the optimized DP-SAG process. In addition, we examined the interface formation mechanism of DP-GaN fabricated by GaN DP-SAG process. We determined that it is possible to fabricate DP-GaN with a sharp interface by optimizing the growth conditions.