Analytical approximations of single-electron device current through non-interacting quantum dot. (March 2021)

• Record Type: Journal Article
• Authors: Moulhim, Ali; Tripathi, Brijesh; Kalam, Abul; Kumar, Manoj
• Is Part Of: Superlattices and microstructures. Volume 151(2021)
• Publication Date: 2021-03
• Subjects: Single-electron transistor -- Non-equilibrium green function technique -- Quantum dot -- Quantum transport; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2021.106819
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: The electron transport through single electron transistor (SET) consisting of quantum dot (QD) coupled to two metallic electrodes has been studied by employing the non-equilibrium Green function (NEGF) technique. The QD considered in this study has a single energy level and non-interacting electrons. The current-voltage characteristics of QD has been studied by using Meir-Wingreen expression. In this paper, an analytical approximation of Meir-Wingreen formula has been presented with respect to the following conditions: (1) low-temperature limit, (2) finite temperature limit with finite energy | ε − ε d | < k T, (3) finite temperature limit with finite bias Γ < e | V | / 2 < K T < ε d, and at high temperatures. Furthermore, the derived analytical formulae are employed to investigate the effect of device parameters (energy level, tunneling rate "level width", gate voltage, and temperature) on the current-voltage characteristic of SET. Highlights: Analytical approximation solutions of Meir-Wingreen formula for weakly coupled QD. Solution for low-temperature limit and for finite temperature with | ε − ε d | < k T . Solution for finite bias Γ < e | V | / 2 < K T < ε d with finite and high temperatures. Effects of device parameters on the current-voltage characteristics of nano-device.