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APA Citation
Rathore, J., Nanwani, A., Mukherjee, S., Das, S., Moutanabbir, O., & Mahapatra, S. (2021). composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn. Journal of physics, 54, . http://access.bl.uk/ark:/81055/vdc_100122220984.0x000064