Cite
HARVARD Citation
Rathore, J. et al. (2021). Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn. Journal of physics. p. . [Online].
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Rathore, J. et al. (2021). Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn. Journal of physics. p. . [Online].