Cite
HARVARD Citation
Fitzgerald, E. et al. (2016). (Invited) SiGe and III-V Materials and Devices: New HEMT and LED Elements in 0.18-Micron CMOS Process and Design. ECS transactions. pp. 439-446. [Online].
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Fitzgerald, E. et al. (2016). (Invited) SiGe and III-V Materials and Devices: New HEMT and LED Elements in 0.18-Micron CMOS Process and Design. ECS transactions. pp. 439-446. [Online].