(Invited) SiGe and III-V Materials and Devices: New HEMT and LED Elements in 0.18-Micron CMOS Process and Design. (18th August 2016)

• Record Type: Journal Article
• Authors: Fitzgerald, Eugene A; Lee, K.E.; Yoon, Soon-Fatt; Chua, S.J.; Tan, Chuan Seng; Ng, G.I.; Zhou, X.; Gong, Xiao; Chang, J.S.; Peh, L.S.; Boon, C.C.; Antoniadis, D.a.; Yadav, Sachin; Nguyen, X.S.; Kohen, D.a.; Kumar, Annie; Zhang, Li; Lee, Kwang Hong; Liu, Z.H.; Chain, S.B.; Ge, T; Choi, P.
• Is Part Of: ECS transactions. Volume 75:Number 8(2016)
• Page Start: 439
• Page End: 446
• Publication Date: 2016-08-18
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07508.0439ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : We have established new methodologies, materials, processing, devices, and circuits for integrating III-V devices monolithically into CMOS circuits. Certain constraints were applied on this research from the start in order to converge on viable commercial strategies as the research moves closer to a path for new innovation in the semiconductor industry. Integration technology has been established for incorporating HEMTs and LEDs into CMOS integrated circuits, and both nitride-based and arsenic-phosphide-based materials are currently supported. Device models are inserted into standard foundry design libraries, allowing silicon technology efficiencies such as exploring various circuit designs before final physical silicon and fabrication-test feedback loops using test chip designs.