Cite
HARVARD Citation
Rosseel, E. et al. (2016). (Invited) Selective Epitaxial Growth of High-P Si:P for Source/Drain Formation in Advanced Si nFETs. ECS transactions. pp. 347-359. [Online].
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Rosseel, E. et al. (2016). (Invited) Selective Epitaxial Growth of High-P Si:P for Source/Drain Formation in Advanced Si nFETs. ECS transactions. pp. 347-359. [Online].