Cite
MLA Citation
Emmanuel Augendre et al.. “(Invited) Germanium Enrichment for Planar-, Fin- and Nanowire-Channel MOSFETs Made on SOI.” ECS transactions, vol. 75, 2016, pp. 505–512. http://access.bl.uk/ark:/81055/vdc_100116177136.0x00000e
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Emmanuel Augendre et al.. “(Invited) Germanium Enrichment for Planar-, Fin- and Nanowire-Channel MOSFETs Made on SOI.” ECS transactions, vol. 75, 2016, pp. 505–512. http://access.bl.uk/ark:/81055/vdc_100116177136.0x00000e