Cite
HARVARD Citation
Augendre, E. et al. (2016). (Invited) Germanium Enrichment for Planar-, Fin- and Nanowire-Channel MOSFETs Made on SOI. ECS transactions. pp. 505-512. [Online].
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Augendre, E. et al. (2016). (Invited) Germanium Enrichment for Planar-, Fin- and Nanowire-Channel MOSFETs Made on SOI. ECS transactions. pp. 505-512. [Online].