Cite
HARVARD Citation
Nakao, H. et al. (2016). Investigation of High Current Tetracene-TFT Using Surface Nitrided SiO2 Gate Insulator Film. ECS transactions. pp. 81-85. [Online].
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Nakao, H. et al. (2016). Investigation of High Current Tetracene-TFT Using Surface Nitrided SiO2 Gate Insulator Film. ECS transactions. pp. 81-85. [Online].