Cite
HARVARD Citation
Chen, J. et al. (2016). Carbon-Doped GaN on SiC Materials for Low-Memory-Effect Devices. ECS transactions. pp. 61-65. [Online].
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Chen, J. et al. (2016). Carbon-Doped GaN on SiC Materials for Low-Memory-Effect Devices. ECS transactions. pp. 61-65. [Online].