Cite
HARVARD Citation
Mertens, H. et al. (2017). (Invited) Gate-All-Around Transistors Based on Vertically Stacked Si Nanowires. ECS transactions. pp. 19-30. [Online].
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Mertens, H. et al. (2017). (Invited) Gate-All-Around Transistors Based on Vertically Stacked Si Nanowires. ECS transactions. pp. 19-30. [Online].