Cite
MLA Citation
Balaji Raghothamachar et al.. “Analysis of Basal Plane Dislocation Dynamics in PVT-Grown 4H-SiC Crystals during High Temperature Treatment.” ECS transactions, vol. 92, 2019, pp. 131–139. http://access.bl.uk/ark:/81055/vdc_100117116611.0x000019