Cite
HARVARD Citation
Raghothamachar, B. et al. (2019). Analysis of Basal Plane Dislocation Dynamics in PVT-Grown 4H-SiC Crystals during High Temperature Treatment. ECS transactions. pp. 131-139. [Online].
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Raghothamachar, B. et al. (2019). Analysis of Basal Plane Dislocation Dynamics in PVT-Grown 4H-SiC Crystals during High Temperature Treatment. ECS transactions. pp. 131-139. [Online].