Cite
HARVARD Citation
Fèvre, A. et al. (2015). Low Doped n-type Localized Porous Silicon Made by Hole Injection from Back-side p+/n Junction for Power Switches Application. ECS transactions. pp. 55-61. [Online].
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Fèvre, A. et al. (2015). Low Doped n-type Localized Porous Silicon Made by Hole Injection from Back-side p+/n Junction for Power Switches Application. ECS transactions. pp. 55-61. [Online].