Low Doped n-type Localized Porous Silicon Made by Hole Injection from Back-side p+/n Junction for Power Switches Application. (18th September 2015)

• Record Type: Journal Article
• Authors: Fèvre, Angélique; Menard, Samuel; Defforge, Thomas; Gautier, Gael
• Is Part Of: ECS transactions. Volume 69:Number 2(2015)
• Page Start: 55
• Page End: 61
• Publication Date: 2015-09-18
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06902.0055ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : The macropore morphology in low doped n-type silicon depending on hole supply technique is investigated. Electron-hole pair generation by illumination and hole injection through p + /n - back-side junction are compared in a highly concentrated HF electrolyte (30 wt. %). Then, the morphology similarities generated by the two techniques are verified towards anodization current density and electrolyte additives. Porous silicon layer is realized in low-doped n-type silicon as part of a device fabrication in industrial environment. Consequently, illumination technique induces implementation complexity. Then, porous silicon etching was investigated using hole injection from back-side p + /n - junction technique. In addition, implanted p + regions were incorporated in the low-doped n-type silicon at the anodic surface. We studied these regions in the capacity of masking layers. It was shown to be ineffective to prevent porous silicon formation as a mesoporous layer was observed after anodization.