(Invited) Monolithic Integration of III-V Semiconductors by Selective Area Growth on Si(001) Substrate: Epitaxy Challenges & Applications. (31st March 2015) - Merckling, Clement
Abstract : This study relates to the selective area growth (SAG) of III-V semiconductors on Silicon substrates. Both approaches, growth in trenches and NWs bottom-up growth, are considered and discussed. We demonstrated in a first part a high control of the two-step InP buffer growth in STI trench width below 20 nm. First GaAs NWs from production MOVPE tool are also shown in a second part. Finally we conclude with the different applications using III-V semiconductors successfully integrated on Silicon substrates.