Capacitive coupled non-zero I–V and type-II memristive properties of the NiFe2O4–TiO2 nanocomposite. (April 2021)

• Record Type: Journal Article
• Authors: Ahir, Namita A.; Takaloo, Ashkan Vakilipour; Nirmal, Kiran A.; Kundale, Somnath S.; Chougale, Mahesh Y.; Bae, Jinho; Kim, Deok-kee; Dongale, Tukaram D.
• Is Part Of: Materials science in semiconductor processing. Volume 125(2021)
• Publication Date: 2021-04
• Subjects: Capacitive coupling -- Type-II memristive effect -- Non-zero hysteresis -- Nanocomposite -- Resistive switching; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2020.105646
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In the present work, we have demonstrated the capacitive coupled non-zero and type-II hysteresis behavior of nickel ferrite (NFO)-titanium oxide (TiO2 ) nanocomposite. For this, NFO nanoparticles (NPs) and TiO2 NPs were synthesized using hydrothermal and sol-gel method, respectively. The NFO–TiO2 nanocomposite was prepared using a solid-state reaction method and characterized by X-ray diffraction, Fourier transform infrared spectroscopy, field emission scanning electron microscope, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy. The electrical results of the NFO–TiO2 memory device have shown non-zero I–V (unable to cross at origin), cross-over I–V and type-II hysteresis (tangential hysteresis loops) properties and their occurrence was depended upon the magnitude of the electrical stimulus. To further clarify the dominance of the memristive and type-II properties, we have calculated the charge-flux and non-transversal di/dv(t) characteristics of the device based on experimental results. The charge transport mechanisms were investigated and a plausible resistive switching mechanism was reported. Our investigations provide some insights to explain the non-zero and type-II hysteresis behavior of the memristive devices. Graphical abstract: Image 1 Highlights: Voltage-dependent capacitive coupled non-zero and type-II hysteresis behavior in NFO–TiO2 nanocomposite. Solution processable material synthesis and detailed characterizations using XRD, FTIR, FESEM, EDS, and XPS. Calculated the charge-flux and non-transversal di/dv(t) characteristics. Electric field-driven oxygen vacancies and redoxable Ag control the resistive switching process.