Solid-phase crystallization of gallium arsenide thin films on insulators. (15th March 2021)

• Record Type: Journal Article
• Authors: Saito, M.; Nishida, T.; Saitoh, N.; Yoshizawa, N.; Suemasu, T.; Toko, K.
• Is Part Of: Materials science in semiconductor processing. Volume 124(2021)
• Publication Date: 2021-03-15
• Subjects: Polycrystalline -- Compound semiconductor -- Low-temperature synthesis; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2020.105623
• Languages: English
• ISSNs: 1369-8001

Abstract

Highlights: The grain size and crystal orientation of polycrystalline GaAs on insulators are discussed for the first time. The precursor conditions dramatically influence the subsequent solid-phase crystallization of GaAs layers. The GaAs layer crystallizes at 400 °C, developing polycrystalline GaAs layer on a flexible plastic sheet. The findings can be key parameters for synthesizing polycrystalline compound semiconductors.