Cite
HARVARD Citation
Yu, J. et al. (2021). Revelation of the dislocations in the C-face of 4H-SiC substrates using a microwave plasma etching treatment. CrystEngComm. 23 (2), pp. 353-359. [Online].
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Yu, J. et al. (2021). Revelation of the dislocations in the C-face of 4H-SiC substrates using a microwave plasma etching treatment. CrystEngComm. 23 (2), pp. 353-359. [Online].