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APA Citation
Fares, C., Islam, Z., Haque, A., Kneiß, M., von Wenckstern, H., Grundmann, M., Tadjer, M., Ren, F., & Pearton, S. J. (2019). effect of Annealing on the Band Alignment of ALD SiO2 on (AlxGa1-x)2O3 for x = 0.2 - 0.65. ECS journal of solid state science and technology, 8, P751–P756. http://access.bl.uk/ark:/81055/vdc_100117124600.0x000001