Cite
HARVARD Citation
Fares, C. et al. (2019). Effect of Annealing on the Band Alignment of ALD SiO2 on (AlxGa1-x)2O3 for x = 0.2 - 0.65. ECS journal of solid state science and technology. pp. P751-P756. [Online].
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Fares, C. et al. (2019). Effect of Annealing on the Band Alignment of ALD SiO2 on (AlxGa1-x)2O3 for x = 0.2 - 0.65. ECS journal of solid state science and technology. pp. P751-P756. [Online].