Cite
HARVARD Citation
Kojima, K. et al. (2017). Investigation of Low Off-Angled 4H-SiC Epitaxial Wafers for Power Device Applications. ECS journal of solid state science and technology. pp. P547-P552. [Online].
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Kojima, K. et al. (2017). Investigation of Low Off-Angled 4H-SiC Epitaxial Wafers for Power Device Applications. ECS journal of solid state science and technology. pp. P547-P552. [Online].