Investigation of Low Off-Angled 4H-SiC Epitaxial Wafers for Power Device Applications. (21st July 2017)

• Record Type: Journal Article
• Authors: Kojima, Kazutoshi; Masumoto, Keiko; Asamizu, Hirokuni; Harada, Shinsuke; Okumura, Hajime
• Is Part Of: ECS journal of solid state science and technology. Volume 6:Number 8(2017)
• Page Start: P547
• Page End: P552
• Publication Date: 2017-07-21
• Subjects: 4H-SiC -- defect -- epitaxiy -- MOS -- off angle -- SBD -- step banching -- Trench MOSFET; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0221708jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : We investigated the potential of low off angled 4H-SiC epitaxial wafers for use in power device applications. To this end, we successfully grew epitaxial layers on 2 degree off-angled and vicinal 4H-SiC Si-face substrate with good surface morphology and low defects density. Schottky diodes, metal oxide semiconductor (MOS) capacitors, and trench metal oxide semiconductor field effective transistors (MOSFETs) were fabricated on these epitaxial layers, and we investigated their characteristics. The results were comparable, with respect to the Schottky diodes and trench MOSFETs and the reliability of MOS capacitors, to those for similar devices fabricated on 4 degree off-angled 4H-SiC Si-face epitaxial wafers. These results suggest that low off-angled 4H-SiC Si-face epitaxial wafers may be effectively utilized in power device applications.