Optimization of a TiN PE-MOCVD Process Using DoE Methodology. (19th May 2017)

• Record Type: Journal Article
• Authors: Geringswald, D.; Hintze, B.; Ernst, M.
• Is Part Of: ECS journal of solid state science and technology. Volume 6:Number 7(2017)
• Page Start: N76
• Page End: N82
• Publication Date: 2017-05-19
• Subjects: DoE -- high aspect ratio -- PE-MOCVD -- TiN; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0161707jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : The miniaturization of circuits is advancing. During chip manufacturing, structures are filled for example by plasma enhanced metal organic chemical vapor deposition (PE-MOCVD). This process reaches its limits in case of very high aspect ratios. However, it is an unsolved question to what extent PE-MOCVD can achieve results with an modified process using Design of Experiment (DoE) methodology. In this context, this work addresses the characterization of a PE-MOCVD of titanium nitride (TiN). Based on the current state of the art, selected responses and factors are considered of the plasma treatment step. The derived process for unstructured wafers is feasible for the stress or for the resistivity. A uniform filling inside a structure with high aspect ratio include for a process temperature of 400°C increase in number of cycles, plasma power, plasma gas ratio hydrogen to nitrogen and plasma treatment time. At lower process temperatures and a significantly increased number of cycles a structure filling is achieved with much less titanium nitride. In contrast to the current process configuration, the deposited titanium nitride film is more uniform inside the entire test structure. Consequently, this paper provides approaches to use the PE-MOCVD for structures with increasing aspect ratios.