Epitaxial Fe on free-standing GaAs nanowires. (9th June 2016)

• Record Type: Journal Article
• Authors: Yang, Mingze; Darbandi, Ali; Majumder, Sarmita; Watkins, Simon; Kavanagh, Karen
• Is Part Of: Semiconductor science and technology. Volume 31:Number 7(2016:Jul.)
• Publication Date: 2016-06-09
• Subjects: nanowires -- epitaxial -- GaAs -- Fe -- electrodeposition -- contacts; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/31/7/074003
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Epitaxial Fe contacts have been fabricated onto the top half of free-standing, Te-doped GaAs nanowires (NWs) via electrodeposition. Electrical isolation from the substrate via a polymeric layer enabled the measurement of electrical transport through individual wires. Using a fixed probe within a scanning electron microscope, an average metal-semiconductor diode barrier height of 0.69 ± 0.03 eV (ideality factor 1.48 ± 0.02) was found.