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APA Citation
Nag, M., Bhoolokam, A., Steudel, S., Chasin, A., Maas, J., Genoe, J., Murata, M., Groeseneken, G., & Heremans, P. (2015). medium Frequency Physical Vapor Deposited Al2O3 and SiO2 as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors. ECS journal of solid state science and technology, 4, Q38–Q42. http://access.bl.uk/ark:/81055/vdc_100117137497.0x000009