Cite
MLA Citation
Jun Ge et al.. “A sub-500 mV monolayer hexagonal boron nitride based memory device.” Materials & design, vol. 198, 2021, p. . http://access.bl.uk/ark:/81055/vdc_100119341703.0x000033
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Jun Ge et al.. “A sub-500 mV monolayer hexagonal boron nitride based memory device.” Materials & design, vol. 198, 2021, p. . http://access.bl.uk/ark:/81055/vdc_100119341703.0x000033