Field‐Effect Transistors: High Performance p‐ and n‐Type Light‐Emitting Field‐Effect Transistors Employing Thermally Activated Delayed Fluorescence (Adv. Funct. Mater. 28/2018). (9th July 2018) - Sobus, Jan
Abstract : Light‐Emitting Field‐Effect Transistors (LEFETs) are a novel class of optoelectronic devices combining switching and light emission properties in a single material stack. In article number 1800340, Chihaya Adachi, Shih‐Chun Lo, Ebinazar B. Namdas, and co‐workers succeed in constructing the first p‐type and n‐type LEFETs employing TADF organic material. Experimental data is supported by numerical simulation, leading to proper localization of the recombination zone and identification of loss pathways.