Cite
HARVARD Citation
Borghello, G. et al. (2021). Ionizing radiation damage in 65 nm CMOS technology: Influence of geometry, bias and temperature at ultra-high doses. Microelectronics and reliability. p. . [Online].
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Borghello, G. et al. (2021). Ionizing radiation damage in 65 nm CMOS technology: Influence of geometry, bias and temperature at ultra-high doses. Microelectronics and reliability. p. . [Online].