Characterization of non-stoichiometric Ga2O3-x thin films grown by radio-frequency powder sputtering. Issue 3 (1st February 2021)

• Record Type: Journal Article
• Authors: Cha, Su Yeon; Kim, Dongwoo; Lim, Hojoon; Mun, Bongjin Simon; Noh, Do Young; Kang, Hyon Chol
• Is Part Of: Ceramics international. Volume 47:Issue 3(2021)
• Page Start: 3238
• Page End: 3243
• Publication Date: 2021-02-01
• Subjects: Non-stoichiometric gallium oxide thin film -- Semiconductor -- X-ray photoelectron spectroscopy -- Electrical conductivity -- Powder sputtering; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2020.09.162
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: We report the synthesis and characterization of non-stoichiometric Ga2 O3-x thin films deposited on sapphire (0001) substrates by radio-frequency powder sputtering. The chemical and electronic states of the non-stoichiometric Ga2 O3-x thin films were investigated. By sputtering in an Ar atmosphere, the as-grown thin films become non-stoichiometric Ga2 O2.7, due to the difference in sputtering yield between Ga and O species of the Ga2 O3 target. The electronic states of the thin films consist of ~85% Ga 3+ and ~15% Ga 1+, corresponding to Ga2 O3 and Ga2 O, respectively. The films have the electrical characteristics of a semiconductor, with electrical conductivity of approximately 5.0 × 10 -4 S cm -1 and a carrier concentration of 4.5 × 10 14 cm -3 at 300 K.