Cite
APA Citation
Chen, K., Zhou, Q., Zhu, L., Dong, Z., Huang, P., Deng, C., Cai, Y., Gao, W., Zhou, C., Chen, W., & Zhang, B. (2021). a novel GaN vertical junction field-effect transistor with intrinsic reverse conduction capability and kilo-volt breakdown voltage. Semiconductor science and technology, 36, . http://access.bl.uk/ark:/81055/vdc_100117437108.0x000054