Cite
HARVARD Citation
Chen, K. et al. (2021). A novel GaN vertical junction field-effect transistor with intrinsic reverse conduction capability and kilo-volt breakdown voltage. Semiconductor science and technology. p. . [Online].
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Chen, K. et al. (2021). A novel GaN vertical junction field-effect transistor with intrinsic reverse conduction capability and kilo-volt breakdown voltage. Semiconductor science and technology. p. . [Online].