Cite
MLA Citation
Shi-Xiang Chen et al.. “Highly Stable Ultrathin TiO2 Based Resistive Random Access Memory with Low Operation Voltage.” ECS journal of solid state science and technology, vol. 7, 2018, pp. Q3183–Q3188. http://access.bl.uk/ark:/81055/vdc_100117130073.0x00000c