Simulations of single event effects in 6T2C-based ferroelectric non-volatile static random access memory. (23rd November 2020)

• Record Type: Journal Article
• Authors: Wang, Jianjian; Bi, Jinshun; Liu, Gang; Bai, Hua; Xi, Kai; Li, Bo; Ji, Lanlong; Majumdar, Sandip
• Is Part Of: Semiconductor science and technology. Volume 36:Number 1(2021)
• Publication Date: 2020-11-23
• Subjects: single event effects -- non-volatile static random access memory -- Hf0.5Zr0.5O2 -- ferroelectric capacitor -- linear energy transfer -- remnant polarization -- coercive voltage; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/abc51f
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: The single event effects (SEEs) on ferroelectric Hf0.5 Zr0.5 O2 capacitor-based non-volatile static random access memory (nvSRAM) were investigated by simulation. A nvSRAM cell integrated with two ferroelectric Hf0.5 Zr0.5 O2 capacitors is proposed in this study. A macro-model of the ferroelectric Hf0.5 Zr0.5 O2 capacitor, extracted from the real fabricated devices, is utilized for simulation analysis. Fundamental store and recall operations of the proposed nvSRAM design have been demonstrated. An independent double exponential current source was utilized and injected into specific circuit nodes to simulate the heavy ion induced single event transient current. The simulation results show that the transient pulse current is possible to upset the logic state of the memory cell from 1 to 0, but whether it can recover in a short time period after the upset errors depends on the exact value of linear energy transfer for the injected particles. In addition, increasing the remnant polarization ( P r ) and decreasing the coercive voltage ( V c ) and film thickness of ferroelectric capacitors can mitigate the influence of SEEs, which provides guidance for process hardening techniques aiming at space applications.