Reliable characteristics and stabilization of on-membrane SOI MOSFET-based components heated up to 335 °C. (19th December 2016)

• Record Type: Journal Article
• Authors: Amor, S; André, N; Gérard, P; Ali, S Z; Udrea, F; Tounsi, F; Mezghani, B; Francis, L A; Flandre, D
• Is Part Of: Semiconductor science and technology. Volume 32:Number 1(2017:Jan.)
• Publication Date: 2016-12-19
• Subjects: diode -- micro-hotplate -- MEMS -- MOSFET -- annealing -- Silicon-on-Insulator; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/32/1/014001
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: In this work we investigate the characteristics and critical operating temperatures of on-membrane embedded MOSFETs from an experimental and analytical point of view. This study permits us to conclude the possibility of integrating electronic circuitry in the close vicinity of micro-heaters and hot operation transducers. A series of calibrations and measurements has been performed to examine the behaviors of transistors, inverters and diodes, actuated at high temperature, on a membrane equipped with an on-chip integrated micro-heater. The studied n- and p-channel body-tied partially-depleted MOSFETs and CMOS inverter are embedded in a 5 μ m-thick membrane fabricated by back-side MEMS micromachining using SOI technology. It has been noted that a pre-stabilization step after the harsh post-CMOS processing, through an in situ high-temperature annealing using the micro-heater, is mandatory in order to stabilize the MOSFETs characteristics. The electrical characteristics and performance of the on-membrane MOS components are discussed when heated up to 335 °C. This study supports the possibility of extending the potential of the micro-hotplate concept, under certain conditions, by embedding more electronic functionalities on the interface of on-membrane-based sensors leading to better sensing and actuation performances and a total area reduction, particularly for environmental or industrial applications.