This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
GaN-based green laser diodes*Project supported by the National Key Research and Development Progress of China (Nos. 2016YFB0401803, 2016YFB0402002), the National Natural Science Foundation of China (Nos. 61574160, 61334005), the Strategic Priority Research Program of the Chinese Academy of Science (No. XDA09020401), and the Science and Technology Support Project of Jiangsu Province (No. BE2013007). (November 2016)
Record Type:
Journal Article
Title:
GaN-based green laser diodes*Project supported by the National Key Research and Development Progress of China (Nos. 2016YFB0401803, 2016YFB0402002), the National Natural Science Foundation of China (Nos. 61574160, 61334005), the Strategic Priority Research Program of the Chinese Academy of Science (No. XDA09020401), and the Science and Technology Support Project of Jiangsu Province (No. BE2013007). (November 2016)
Main Title:
GaN-based green laser diodes*Project supported by the National Key Research and Development Progress of China (Nos. 2016YFB0401803, 2016YFB0402002), the National Natural Science Foundation of China (Nos. 61574160, 61334005), the Strategic Priority Research Program of the Chinese Academy of Science (No. XDA09020401), and the Science and Technology Support Project of Jiangsu Province (No. BE2013007).
Abstract: Recently, many groups have focused on the development of GaN-based green LDs to meet the demand for laser display. Great progresses have been achieved in the past few years even that many challenges exist. In this article, we analysis the challenges to develop GaN-based green LDs, and then the approaches to improve the green LD structure in the aspect of crystalline quality, electrical properties, and epitaxial layer structure are reviewed, especially the work we have done.