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HARVARD Citation
Sugie, R. et al. (2020). Low-energy cross-sectional cathodoluminescence analysis of the depth distribution of point defects in Si-ion-implanted β-Ga2O3. Applied physics express. p. . [Online].
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Sugie, R. et al. (2020). Low-energy cross-sectional cathodoluminescence analysis of the depth distribution of point defects in Si-ion-implanted β-Ga2O3. Applied physics express. p. . [Online].