Cite
APA Citation
Jang, H., Kim, B., Koo, S., & Ko, D. (n.d.). formation of a Ge-rich Si1−xGex (x > 0.9) fin epitaxial layer condensed by dry oxidation. Semiconductor science and technology, 32, . http://access.bl.uk/ark:/81055/vdc_100065744193.0x00004c